IXTH76N25T IXYS, IXTH76N25T Datasheet - Page 6

• Manufacturer Part Number: IXTH76N25T
• Description: MOSFET N-CH 250V 76A TO-247
• Manufacturer: IXYS

Specifications of IXTH76N25T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 39 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 76A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 92nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 460W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.039 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 76 A
• Power Dissipation: 460 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 76
• Rds(on), Max, Tj=25°c, (?): 0.039
• Ciss, Typ, (pf): 4920
• Qg, Typ, (nc): 92
• Trr, Typ, (ns): 148
• Trr, Max, (ns): -
• Pd, (w): 460
• Rthjc, Max, (k/w): 0.27
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

I
38A
IXYS reserves the right to change limits, test conditions, and dimensions.
D
=
30
28
26
24
22
20
18
16
14
12
10
30
28
26
24
22
20
18
16
14
12
34
32
30
28
26
24
22
20
18
16
14
12
10
15
3
25
T
T
20
t
T
V
T
4
J
J
Switching Times vs. Gate Resistance
r
J
J
DS
Switching Times vs. Drain Current
= 25ºC
= 125ºC
35
= 125ºC, V
= 125ºC
Rise Time vs. Junction Temperature
25
= 125V
5
Fig. 17. Resistive Turn-off
I
30
Fig. 15. Resistive Turn-on
45
D
6
= 38A
Fig. 13. Resistive Turn-on
t
d(on)
T
35
GS
J
T
7
= 25ºC
55
J
I
= 15V
- - - -
D
R
40
- Degrees Centigrade
- Amperes
G
8
I
- Ohms
D
45
65
= 76A
9
50
t
R
V
I
f
75
G
DS
10
D
= 3.3 Ω , V
55
= 38A
= 125V
11
85
60
12
t
d(off)
65
GS
95
= 15V
13
- - - -
70
I
R
V
V
D
G
GS
DS
105
= 76A
= 3.3 Ω
14
75
= 15V
= 125V
80
15
115
70
67
64
61
58
55
52
49
46
43
25
24
23
22
21
20
125
IXTI76N25T IXTP76N25T IXTQ76N25T
30
28
26
24
22
20
18
16
80
70
60
50
40
30
20
10
34
32
30
28
26
24
22
20
18
16
14
12
10
8
25
3
Switching Times vs. Junction Temperature
15
Switching Times vs. Gate Resistance
4
t
T
V
35
20
f
J
DS
= 125ºC, V
R
V
V
= 125V
GS
DS
5
G
25
45
= 3.3 Ω
Fig. 18. Resistive Turn-off
I
Fig. 16. Resistive Turn-off
= 15V
= 125V
D
6
T
Rise Time vs. Drain Current
= 38A, 76A
30
J
Fig. 14. Resistive Turn-on
55
t
- Degrees Centigrade
d(off)
GS
7
IXTA76N25T IXTH76N25T
35
R
= 15V
- - - -
65
G
t
R
V
8
f
I
DS
G
- Ohms
40
D
= 3.3 Ω , V
- Amperes
= 125V
I
75
9
D
45
= 38A
10
I
D
t
85
d(off)
50
= 76A
GS
11
T
T
- - - -
= 15V
J
J
95
55
= 25ºC
= 125ºC
12
IXYS REF: T_76N25T(6E)06-28-06
60
105
13
65
115
14
70
15
125
190
170
150
130
110
90
70
50
75
65
62
59
56
53
50
47
44
80