STD11NM60N-1 STMicroelectronics, STD11NM60N-1 Datasheet

MOSFET N-CH 600V 10A I-PAK

STD11NM60N-1

Manufacturer Part Number
STD11NM60N-1
Description
MOSFET N-CH 600V 10A I-PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STD11NM60N-1

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
450 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
31nC @ 10V
Input Capacitance (ciss) @ Vds
850pF @ 50V
Power - Max
90W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5963-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD11NM60N-1
Manufacturer:
ST
Quantity:
12 500
Part Number:
STD11NM60N-1
Manufacturer:
ST
0
Features
1. Limited only by maximum temperature allowed
Application
Description
This series of devices is designed using the
second generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Table 1.
March 2009
STB11NM60N-1
STD11NM60N-1
STD11NM60N
STB11NM60N
STF11NM60N
STP11NM60N
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Switching applications
STB11NM60N-1
STD11NM60N-1
Type
STD11NM60N
STB11NM60N
STP11NM60N
STF11NM60N
Order codes
N-channel 600 V, 0.37 Ω, 10 A MDmesh™ II Power MOSFET
Device summary
(@T
650 V
650 V
650 V
650 V
650 V
650 V
V
DSS
J
max)
TO-220, TO-220FP, I
R
0.45 Ω
0.45 Ω
0.45 Ω
0.45 Ω
0.45 Ω
0.45 Ω
max
DS(on)
D11NM60N
D11NM60N
B11NM60N
P11NM60N
F11NM60N
11NM60N
Marking
10 A
10 A
10 A
10 A
10 A
10 A
I
D
(1)
Rev 5
Figure 1.
TO-220
I²PAK
TO-220FP
Package
TO-220
D²PAK
DPAK
I²PAK
2
IPAK
PAK, IPAK, DPAK, D
1
1 2
2
3
3
Internal schematic diagram
DPAK
STx11NM60N
D²PAK
1
3
1
3
Tape and reel
Tape and reel
Packaging
Tube
Tube
Tube
Tube
IPAK
TO-220FP
www.st.com
2
1
2
PAK
3
1
1/20
2
3
20

Related parts for STD11NM60N-1

STD11NM60N-1 Summary of contents

Page 1

... It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes STB11NM60N-1 STB11NM60N STD11NM60N-1 STD11NM60N STP11NM60N STF11NM60N March 2009 TO-220, TO-220FP DS(on) I ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STx11NM60N 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed ...

Page 4

Electrical characteristics 2 Electrical characteristics (T =25 °C unless otherwise specified) CASE Table 5. On/off states Symbol Drain-source breakdown V (BR)DSS voltage (1) dv/dt Drain-source voltage slope Zero gate voltage drain I DSS current (V Gate body leakage current I ...

Page 5

STx11NM60N Table 7. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 8. Source drain diode Symbol I Source-drain current SD I Source-drain current (pulsed) SDM (1) ...

Page 6

Electrical characteristics Figure 4. Safe operating area for TO-220FP Figure 6. Safe operating area for DPAK, IPAK Figure 7. 6/20 Figure 5. Thermal impedance for TO-220FP Thermal impedance for DPAK, IPAK STx11NM60N ...

Page 7

STx11NM60N Figure 8. Output characteristics Figure 10. Transconductance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Electrical characteristics Figure 9. Transfer characteristics Figure 11. Static drain-source on resistance 7/20 ...

Page 8

Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature Figure 16. Source-drain diode forward characteristics 8/20 Figure 15. Normalized on resistance vs temperature Figure 17. Normalized B VDSS STx11NM60N vs temperature ...

Page 9

STx11NM60N 3 Test circuits Figure 18. Switching times test circuit for resistive load Figure 20. Test circuit for inductive load switching and diode recovery times Figure 22. Unclamped inductive waveform Figure 19. Gate charge test circuit Figure 21. Unclamped inductive ...

Page 10

Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available ...

Page 11

STx11NM60N Dim L20 L30 ∅P Q TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.48 0.70 15.25 15.75 1.27 10 10.40 ...

Page 12

Package mechanical data Dim Dia 12/20 TO-220FP mechanical data mm. Min. Typ Max. 4.40 4.60 2.5 2.7 2.5 2.75 0.45 0.70 0.75 1.00 1.15 ...

Page 13

STx11NM60N Dim D²PAK (TO-263) mechanical data mm Min Typ Max 4.40 4.60 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 ...

Page 14

Package mechanical data Dim 14/20 I²PAK (TO-262) mechanical data mm Min Typ Max 4.40 4.60 2.40 2.72 0.61 0.88 1.14 1.70 0.49 0.70 1.23 1.32 8.95 9.35 ...

Page 15

STx11NM60N DIM TO-252 (DPAK) mechanical data mm. min. typ 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.40 4.70 ...

Page 16

Package mechanical data DIM (L1 16/20 TO-251 (IPAK) mechanical data mm. min. typ 2.20 0.90 0.64 5.20 0.45 0.48 6.00 6.40 2.28 4.40 16.10 9.00 ...

Page 17

STx11NM60N 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. MAX 10.4 10.6 B1 12.1 D 1.5 1.6 D1 1.5 E 1.65 1.85 F 7.4 7.6 K0 2.55 ...

Page 18

Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. A0 10.5 B0 15.7 D 1.5 D1 1.59 E 1.65 F 11.4 K0 4.8 P0 3.9 P1 11 0.25 W 23.7 * ...

Page 19

STx11NM60N 6 Revision history Table 9. Document revision history Date 03-Aug-2006 14-Nov-2006 02-Oct-2007 03-Mar-2008 03-Mar-2009 Revision 1 First release 2 Complete version Figure 8.: Output characteristics 3 package (I²PAK) 4 Added new package D²PAK Figure 2, Figure 4 5 and ...

Page 20

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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