STD11NM60N-1 STMicroelectronics, STD11NM60N-1 Datasheet - Page 5

• Manufacturer Part Number: STD11NM60N-1
• Description: MOSFET N-CH 600V 10A I-PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD11NM60N-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 850pF @ 50V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5963-5

STx11NM60N
2.1
Figure 2.
Table 7.
Table 8.
1.
Electrical characteristics (curves)
Safe operating area for TO-220,
I²PAK, D²PAK
Symbol
Symbol
V
t
t
I
I
I
d(on)
d(off)
Pulsed: pulse duration = 300µs, duty cycle 1.5%
RRM
RRM
I
SDM
SD
Q
Q
t
SD
t
t
t
r
f
rr
rr
rr
rr
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Figure 3.
V
R
Figure 18
Figure 23
I
I
V
Figure 20
V
di/dt =100 A/µs, I
T
SD
SD
J
DD
DD
DD
G
= 150 °C
= 4.7 Ω, V
= 10 A, V
=10 A, di/dt =100 A/µs,
= 300 V, I
=100 V
=100 V
Test conditions
Test conditions
Figure 20
GS
Thermal impedance for TO-220,
I²PAK, D²PAK
GS
D
=0
= 5 A,
= 10 V
SD
= 10 A
Electrical characteristics
Min. Typ. Max. Unit
Min.
3.26
19.2
4.42
19.2
Typ.
18.5
340
460
22
50
12
Max. Unit
1.3
10
40
µC
µC
ns
ns
A
A
V
A
A
ns
ns
ns
ns
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