STD11NM60N-1 STMicroelectronics, STD11NM60N-1 Datasheet - Page 7

• Manufacturer Part Number: STD11NM60N-1
• Description: MOSFET N-CH 600V 10A I-PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD11NM60N-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 850pF @ 50V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5963-5

STx11NM60N
Figure 8.
Figure 10. Transconductance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
Output characteristics
Figure 9.
Figure 11. Static drain-source on resistance
Transfer characteristics
Electrical characteristics
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