STD11NM60N-1 STMicroelectronics, STD11NM60N-1 Datasheet - Page 14

MOSFET N-CH 600V 10A I-PAK

STD11NM60N-1

Manufacturer Part Number
STD11NM60N-1
Description
MOSFET N-CH 600V 10A I-PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STD11NM60N-1

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
450 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
31nC @ 10V
Input Capacitance (ciss) @ Vds
850pF @ 50V
Power - Max
90W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5963-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD11NM60N-1
Manufacturer:
ST
Quantity:
12 500
Part Number:
STD11NM60N-1
Manufacturer:
ST
0
Package mechanical data
14/20
Dim
A1
b1
c2
e1
L1
L2
A
D
E
b
c
e
L
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
3.50
1.27
Min
10
13
I²PAK (TO-262) mechanical data
mm
Typ
10.40
Max
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
3.93
1.40
14
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
Min
inch
Typ
STx11NM60N
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
Max

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