STD11NM60N-1 STMicroelectronics, STD11NM60N-1 Datasheet - Page 6

• Manufacturer Part Number: STD11NM60N-1
• Description: MOSFET N-CH 600V 10A I-PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD11NM60N-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 850pF @ 50V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5963-5

Electrical characteristics
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Figure 4.
Figure 6.
Safe operating area for TO-220FP
Safe operating area for DPAK, IPAK Figure 7.
Figure 5.
Thermal impedance for DPAK, IPAK
Thermal impedance for TO-220FP
STx11NM60N