STB35N65M5 STMicroelectronics, STB35N65M5 Datasheet - Page 10

• Manufacturer Part Number: STB35N65M5
• Description: MOSFET N-CH 650V 27A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB35N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 98 mOhm @ 13.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 83nC @ 10V
• Input Capacitance (ciss) @ Vds: 3750pF @ 100V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.098 Ohm
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 17 A, 27 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 83 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10565-2

Package mechanical data
4
10/18
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
®
packages, depending on their level of environmental compliance. ECOPACK
Doc ID 15325 Rev 2
STB/F/I/P/W35N65M5
®