STB35N65M5 STMicroelectronics, STB35N65M5 Datasheet - Page 7

• Manufacturer Part Number: STB35N65M5
• Description: MOSFET N-CH 650V 27A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB35N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 98 mOhm @ 13.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 83nC @ 10V
• Input Capacitance (ciss) @ Vds: 3750pF @ 100V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.098 Ohm
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 17 A, 27 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 83 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10565-2

STB/F/I/P/W35N65M5
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
Figure 12. Capacitance variations
10000
1000
V
100
(V)
(pF)
(A)
40
30
20
10
12
50
10
10
I
GS
C
D
0
6
4
2
8
0
1
0
0
0.1
V
V
Output characteristics
DS
GS
=10V
5
1
10
V
I
DD
D
50
=13.5A
15
=520V
10
20
25
100
100
30
V
6V
5V
GS
V
Doc ID 15325 Rev 2
DS
Q
V
AM05420v1
AM05414v1
AM05418v1
DS
g
(V)
320
(nC)
400
80
0
480
240
160
Ciss
Crss
Coss
(V)
Figure 9.
Figure 13. Output capacitance stored energy
R
DS(on)
E
0.10
0.05
(µJ)
0.09
0.08
0.06
0.03
0.07
0.04
(A)
(Ω)
40
30
20
10
50
I
oss
16
12
10
14
D
0
2
8
6
4
0
0
0
0
Transfer characteristics
100
2
5
V
I
200 300
D
GS
=13.5A
10
4
=10V
Electrical characteristics
6
15
400
8
20
500 600
10
25
V
GS
AM05415v1
AM05417v1
AM05419v1
V
I
D
DS
(V)
(A)
(V)
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