STB35N65M5 STMicroelectronics, STB35N65M5 Datasheet - Page 8

• Manufacturer Part Number: STB35N65M5
• Description: MOSFET N-CH 650V 27A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB35N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 98 mOhm @ 13.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 83nC @ 10V
• Input Capacitance (ciss) @ Vds: 3750pF @ 100V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.098 Ohm
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 17 A, 27 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 83 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10565-2

Electrical characteristics
1. Eon including reverse recovery of a SiC diode
8/18
Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
Figure 18. Switching losses vs gate resistance
(norm)
V
GS(th)
1.00
0.80
0.70
1.10
0.90
(V)
V
0.6
0.4
0.2
0.8
1.2
1.0
(µJ)
400
350
300
250
200
150
100
SD
-50
0
50
E
0
0
0
vs temperature
characteristics
(1)
-25
I
V
V
T
D
GS
CL
J
=15A
=150°C
10
=400V
=10V
10
T
0
J
=-50°C
20
25
20
50
30
75
30
40
100
T
Eon
J
40
50
=25°C
T
J
I
(°C)
Eoff
SD
Doc ID 15325 Rev 2
AM05424v1
AM05422v1
AM05421v1
(A)
R
G
(Ω)
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
(norm)
(norm)
R
BV
DS(on)
0.99
0.97
0.93
1.07
1.05
1.03
0.95
1.01
DSS
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50
-50
temperature
-25
-25
0
0
25
25
VDSS
50
50
STB/F/I/P/W35N65M5
75
75
vs temperature
100
100
125
T
J
(°C)
AM05423v1
AM05416v1
T
J
(°C)