STB35N65M5 STMicroelectronics, STB35N65M5 Datasheet - Page 6

• Manufacturer Part Number: STB35N65M5
• Description: MOSFET N-CH 650V 27A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB35N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 98 mOhm @ 13.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 83nC @ 10V
• Input Capacitance (ciss) @ Vds: 3750pF @ 100V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.098 Ohm
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 17 A, 27 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 83 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10565-2

Electrical characteristics
2.1
6/18
Figure 2.
Figure 4.
Figure 6.
0.01
100
100
100
0.1
0.1
0.1
(A)
(A)
(A)
10
10
10
I
I
I
D
D
D
1
1
1
0.1
0.1
0.1
Electrical characteristics (curves)
Safe operating area for TO-220,
D²PAK
Safe operating area for TO-220FP
Safe operating area for TO-247
1
1
1
10
10
10
Tj=150°C
Tc=25°C
Sinlge pulse
100
100
100
Tj=150°C
Tc=25°C
Sinlge pulse
Tj=150°C
Tc=25°C
Sinlge pulse
V
V
V
DS
DS
DS
(V)
(V)
(V)
Doc ID 15325 Rev 2
100µs
100µs
100µs
10µs
1ms
10ms
10µs
1ms
10ms
10µs
1ms
10ms
AM05411v1
AM05412v1
AM05413v1
Figure 3.
Figure 5.
Figure 7.
Thermal impedance for TO-220,
D²PAK
Thermal impedance for TO-220FP
Thermal impedance for TO-247
STB/F/I/P/W35N65M5