STB35N65M5 STMicroelectronics, STB35N65M5 Datasheet - Page 5

• Manufacturer Part Number: STB35N65M5
• Description: MOSFET N-CH 650V 27A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB35N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 98 mOhm @ 13.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 83nC @ 10V
• Input Capacitance (ciss) @ Vds: 3750pF @ 100V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.098 Ohm
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 17 A, 27 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 83 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10565-2

STB/F/I/P/W35N65M5
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
SD
d(on)
d(off)
RRM
RRM
I
Q
Q
SD
t
t
t
t
rr
rr
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 15325 Rev 2
I
I
V
I
V
(see
V
R
(see
SD
SD
SD
DD
DD
DD
G
= 27 A, V
= 27 A, di/dt = 100 A/µs
= 27 A, di/dt = 100 A/µs
= 4.7 Ω, V
= 60 V (see
= 60 V, T
= 400 V, I
Figure
Figure
Test conditions
Test conditions
24)
21)
GS
j
GS
D
= 150 °C
= 16 A,
= 0
= 10 V
Figure
24)
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
Typ.
360
425
36
38
60
12
64
16
7
8
Max. Unit
Max. Unit
108
1.5
27
-
nC
nC
ns
ns
ns
ns
ns
ns
5/18
A
A
V
A
A