TPCA8010-H(TE12LQM Toshiba, TPCA8010-H(TE12LQM Datasheet - Page 3

• Manufacturer Part Number: TPCA8010-H(TE12LQM
• Description: MOSFET N-CH 200V 5.5A SOP-8 ADV
• Manufacturer: Toshiba

Specifications of TPCA8010-H(TE12LQM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 2.7A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 10V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: 2-5Q1A
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohms
• Forward Transconductance Gfs (max / Min): 3.9 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 3.7 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Gate switch charge
Drain reverse current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-ON time
Fall time
Turn-OFF time
Pulse
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
I
I
C
I
C
|Y
C
Q
Q
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
t
t
iss
rss
gd
sw
th
gs
fs
r
f
g
|
V
V
I
I
I
V
V
V
V
Duty ≤ 1%, t
V
I
V
D
D
D
DR
I
GS
DS
DS
GS
DS
DS
DD
D
GS
= 10 mA, V
= 10 mA, V
= 10 mA, V
3
= 5.5 A
= 5.5 A, V
(Ta = 25°C)
= ±16 V, V
= 200 V, V
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, V
≈ 160 V, V
10 V
0 V
Test Condition
Test Condition
w
D
D
D
GS
GS
GS
GS
GS
= 10 μs
= 1 mA
= 2.7 A
DS
GS
= 2.7 A
GS
⎯
= 0 V
= −5 V
= −20 V
= 0 V
= 0 V, f = 1 MHz
= 0 V
= 0 V
= 10 V,
I
D
V
= 2.7 A
DD
≈ 100 V
V
OUT
Min
200
200
150
Min
2.0
1.8
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
0.38
Typ.
600
220
3.9
7.6
2.4
3.7
20
17
13
70
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TPCA8010-H
8
2009-12-21
0.45
−2.0
Max
Max
±10
100
4.0
11
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
nC
μA
μA
pF
ns
Ω
V
V
S
A
V