TPCA8010-H(TE12LQM Toshiba, TPCA8010-H(TE12LQM Datasheet - Page 6

• Manufacturer Part Number: TPCA8010-H(TE12LQM
• Description: MOSFET N-CH 200V 5.5A SOP-8 ADV
• Manufacturer: Toshiba

Specifications of TPCA8010-H(TE12LQM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 2.7A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 10V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: 2-5Q1A
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohms
• Forward Transconductance Gfs (max / Min): 3.9 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 3.7 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
2.5
0.1
1.5
0.5
10
3
2
1
1
0
0
1
I D max (Continuous)
I D max (Pulse) *
Curves
linearly
temperature.
*: Single pulse
Tc = 25°C
(1)
(2)
Ambient temperature Ta (°C)
Drain-source voltage V
must
with
DC Operation
40
Tc = 25°C
1000
100
Safe operating area
0.1
10
0.001
increase
be
1
10
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Tc=25℃
derated
P
D
80
– Ta
in
(1) Device mounted on a
(2) Device mounted on a
t =10s
glass-epoxy board (a)
(Note 2a)
glass-epoxy board (b)
(Note 2b)
V DSS max
0.01
t =1 ms *
100
DS
120
10 ms *
(V)
0.1
160
Pulse width t
1000
r
6
th
– t
1
w
w
(s)
60
40
20
0
10
0
Case temperature Tc (°C)
40
100
Single pulse
P
D
80
– Tc
(2)
(1)
(3)
1000
TPCA8010-H
120
2009-12-21
160