TPCA8010-H(TE12LQM Toshiba, TPCA8010-H(TE12LQM Datasheet - Page 5

• Manufacturer Part Number: TPCA8010-H(TE12LQM
• Description: MOSFET N-CH 200V 5.5A SOP-8 ADV
• Manufacturer: Toshiba

Specifications of TPCA8010-H(TE12LQM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 2.7A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 10V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: 2-5Q1A
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohms
• Forward Transconductance Gfs (max / Min): 3.9 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 3.7 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
100
1000
250
200
150
100
600
200
10
800
400
50
1
0.1
0
0
0
−80
Common source
Common source
Common source
V GS = 0 V
Ta = 25°C
f = 1 MHz
I D = 5.5 A
Ta = 25°C
Pulse test
V GS = 10 V
Pulse test
Drain-source voltage V
−40
Ambient temperature Ta (°C)
Total gate charge Q
Dynamic input/output
V DS
Capacitance – V
1
5
characteristics
0
R
DS (ON)
I D = 5.5A
V GS
40V
40
80V
− Ta
V DD = 160V
10
10
2.7
DS
80
DS
g
1.4
(nC)
(V)
120
C iss
C oss
C rss
100
15
160
20
16
12
8
4
0
5
100
0.1
10
1
0
4
3
2
1
0
−80
Common source
10
Ta = 25°C
Pulse test
Drain-source voltage V
−40
5
Ambient temperature Ta (°C)
−0.4
3
0
I
DR
1
V
th
− V
40
− Ta
DS
−0.8
V GS = 0 V
80
DS
TPCA8010-H
Common source
V DS = 10 V
Pulse test
I D = 1mA
(V)
120
2009-12-21
−1.2
160