2SK3845(Q) Toshiba, 2SK3845(Q) Datasheet - Page 2

• Manufacturer Part Number: 2SK3845(Q)
• Description: MOSFET N-CH 60V 70A SC-67
• Manufacturer: Toshiba

Specifications of 2SK3845(Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 196nC @ 10V
• Input Capacitance (ciss) @ Vds: 12400pF @ 10V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: 2-16C1B (TO-247 N)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 70A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 5.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0058 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 70 A
• Power Dissipation: 125 W
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics (Ta = 25°C)
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
TOSHIBA
K3845
Characteristics
Characteristics
Rise time
Turn-ON time
Fall time
Turn-OFF time
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Note 1)
V
V
R
Symbol
(BR) DSS
(BR) DSX
DS (ON)
⎪Y
I
I
C
C
C
Q
Q
GSS
DSS
V
Q
t
t
on
off
oss
t
t
rss
iss
gd
th
gs
fs
r
f
g
Symbol
V
⎪
I
DRP
I
Q
DR
DSF
t
rr
rr
Duty < = 1%, t
V
V
I
I
V
V
V
V
V
V
D
D
GS
DS
DS
GS
DS
DS
GS
DD
= 10mA, V
= 10mA, V
10 V
0 V
I
I
dI
DR
DR
= ±16 V, V
= 60V, V
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, V
∼ − 48 V, V
DR
2
(Ta = 25°C)
= 70 A, V
= 70 A, V
/dt = 50 A/µs
w
Test Condition
GS
GS
D
D
D
= 10 µs
GS
GS
Test Condition
GS
= 1 mA
= 35 A
DS
= 35 A
= 0 V
= −20 V
GS
GS
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 0 V
I
⎯
⎯
= 0 V
D
= 0 V,
= 35 A
V
DD
D
R
≒30 V
= 70 A
L
= 0.86 Ω
V
OUT
Min
Min
2.0
60
35
44
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
12400
1100
Typ.
Typ.
700
200
196
148
4.7
88
17
44
35
48
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
70
77
2006-11-17
2SK3845
Max
Max
−1.5
±10
100
280
4.0
5.8
70
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
µA
µA
pF
nC
nC
ns
ns
V
V
S
A
A
V