2SK3845(Q) Toshiba, 2SK3845(Q) Datasheet - Page 5
![MOSFET N-CH 60V 70A SC-67](/photos/22/7/220717/ge3to24705-40_sml.jpg)
2SK3845(Q)
Manufacturer Part Number
2SK3845(Q)
Description
MOSFET N-CH 60V 70A SC-67
Manufacturer
Toshiba
Datasheet
1.2SK3845Q.pdf
(6 pages)
Specifications of 2SK3845(Q)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.8 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
196nC @ 10V
Input Capacitance (ciss) @ Vds
12400pF @ 10V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
2-16C1B (TO-247 N)
Transistor Polarity
N Channel
Continuous Drain Current Id
70A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
5.8mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.0058 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
70 A
Power Dissipation
125 W
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3845(Q)
Manufacturer:
MOTOROLA
Quantity:
14 000
1000
500
300
100
0.5
0.3
0.1
30
10
5
3
1
0.1
I D max (continuous)
*: Single nonrepetitive pulse
Curves must be derated
linearly with increase in
temperature.
I D max (pulsed) *
Tc = 25°C
Drain-source voltage V
Safe operating area
0.01
0.1
10
1
10 µ
1
DC operation
Duty = 0.5
0.05
Tc = 25°C
0.2
0.1
1 ms *
0.01
100 µ
10
DS
V DSS max
100 µs *
0.02
(V)
1 m
100
Single Pulse
Pulse width t
r
th
10 m
5
R
V
− t
G
DD
w
= 25 Ω
w
= 25 V, L = 91 µH
(S)
500
400
300
200
100
0
15 V
25
0 V
100 m
Test circuit
P DM
Channel temperature (initial) Tch (°C)
50
Duty = t/T
R th (ch-c) = 1.0°C/W
t
T
1
75
E
AS
Ε AS
– T
V
DD
=
ch
100
B
Wave form
1
2
VDSS
I
⋅
AR
L
10
⋅
2 I
⋅
125
⎛
⎜
⎜
⎝
B VDSS
V
DS
B VDSS
2006-11-17
2SK3845
150
−
V DD
⎞
⎟
⎟
⎠