BSS84PW L6327 Infineon Technologies, BSS84PW L6327 Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single BSS84PW L6327
Manufacturer Part Number
BSS84PW L6327
Description
MOSFET P-CH 60V 150MA SOT-323
Manufacturer
Infineon Technologies
Specifications of BSS84PW L6327
Package / Case
SOT-323
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 Ohm @ 150mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
150mA
Vgs(th) (max) @ Id
2V @ 20µA
Gate Charge (qg) @ Vgs
1.5nC @ 10V
Input Capacitance (ciss) @ Vds
19.1pF @ 25V
Power - Max
300mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
8 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.15 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000247312
SIPMOS
Features
·
·
·
·
·
Type
BSS84PW
Maximum Ratings,at T
Parameter
Continuous drain current
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Avalanche energy, periodic limited by T
Reverse diode d v /d t
I
T
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
Rev 1.3
Enhancement mode
A
A
jmax
A
P-Channel
Avalanche rated
Logic Level
d v /d t rated
= -0.15 A, V
= -0.15 A , V
= 25 °C
= 25 °C
= 25 °C
= 150 °C
Small-Signal-Transistor
DS
DD
= -48 V, d i /d t = 200 A/µs,
= -25 V, R
Package
PG-SOT-323 L6327:3000pcs/r.
j
= 25 °C, unless otherwise specified
GS
= 25
Product Summary
Drain source voltage
Drain-source on-state resistance
Continuous drain current
Tape and Reel
W
j max
Page 1
Symbol
I
I
E
E
d v /d t
V
P
T
D
D puls
j ,
AS
AR
GS
tot
T
Marking
YBs
st g
Pin 1
-55...+150
55/150/56
G
V
R
I
Value
D
-0.15
DS
2.61
0.03
DS(on)
-0.6
±20
0.3
6
3
PIN 2
S
BSS84PW
2006-12-05
-0.15
-60
8
1
Unit
A
mJ
kV/µs
V
W
°C
PIN 3
VSO05561
D
V
W
A
2
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BSS84PW L6327 Summary of contents
SIPMOS Small-Signal-Transistor Features · P-Channel · Enhancement mode · Avalanche rated · Logic Level · rated Type Package BSS84PW PG-SOT-323 L6327:3000pcs/r. Maximum Ratings, °C, unless otherwise specified j Parameter Continuous drain current T ...
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 3) SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage ...
Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...
Power Dissipation tot A BSS84PW 0.32 W 0.24 0.20 0.16 0.12 0.08 0.04 0. Safe operating area parameter : D = ...
Typ. output characteristic =25° parameter µs p BSS84PW -0. tot -0.28 -0.24 -0.20 -0.16 -0.12 -0.08 -0.04 0.00 0.0 -0.5 ...
Drain-source on-resistance DS(on) parameter -0.17A max -60 - Typ. capacitances Parameter ...
Avalanche energy par -0. - 3.0 mJ 2.0 1.5 1.0 0.5 0 105 Drain-source breakdown voltage V = ...
... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...
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