BSS84PW L6327 Infineon Technologies, BSS84PW L6327 Datasheet - Page 6
![MOSFET P-CH 60V 150MA SOT-323](/photos/5/26/52615/pkg_sot-323_sml.jpg)
BSS84PW L6327
Manufacturer Part Number
BSS84PW L6327
Description
MOSFET P-CH 60V 150MA SOT-323
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSS84PW_L6327.pdf
(8 pages)
Specifications of BSS84PW L6327
Package / Case
SOT-323
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 Ohm @ 150mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
150mA
Vgs(th) (max) @ Id
2V @ 20µA
Gate Charge (qg) @ Vgs
1.5nC @ 10V
Input Capacitance (ciss) @ Vds
19.1pF @ 25V
Power - Max
300mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
8 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.15 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000247312
Drain-source on-resistance
R
parameter: I
Typ. capacitances
C = f(V
Parameter: V
DS(on)
Rev 1.3
pF
10
10
10
W
16
12
10
8
6
4
2
0
-60
2
1
0
0
DS
= f( T j )
)
D
-5
-20
GS
= -0.17A, V
=0 V, f =1 MHz
-10
max.
20
-15
C
C
C
oss
rss
iss
60
GS
= -10 V
-20
100
typ.
V
°C
T
V
j
DS
160
-30
Page 6
Gate threshold voltage
V
parameter: V
Forward characteristics of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
-10
-10
-10
-10
-2.5
-1.5
-1.0
-0.5
0.0
V
A
-1
-2
-3
-60
0.0
0
= f ( T j )
SD
BSS84PW
)
-0.4
-20
GS
-0.8
p
= V
= 80 µs
20
DS
-1.2
T
T
T
T
j
j
j
j
, I
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
60
D
-1.6
typ.
min.
max.
= -20 µA
-2.0
100
BSS84PW
2006-12-05
-2.4
°C
V
V
T
SD
j
-3.0
180