BUZ73AL Infineon Technologies, BUZ73AL Datasheet - Page 4
![MOSFET N-CH 200V 5.5A TO-220AB](/photos/5/61/56104/buz73al_sml.jpg)
BUZ73AL
Manufacturer Part Number
BUZ73AL
Description
MOSFET N-CH 200V 5.5A TO-220AB
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BUZ73AL.pdf
(10 pages)
Specifications of BUZ73AL
Package / Case
TO-220AB
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
600 mOhm @ 3.5A, 5V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
5.5A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
840pF @ 25V
Power - Max
40W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.6 Ohm @ 5 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.5 A
Power Dissipation
40000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BUZ73AL
BUZ73ALIN
BUZ73ALX
BUZ73ALXK
SP000011375
BUZ73ALIN
BUZ73ALX
BUZ73ALXK
SP000011375
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BUZ73AL
Manufacturer:
SIEMENS
Quantity:
5 412
Part Number:
BUZ73AL
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Electrical Characteristics, at T
Rev. 2.3
Parameter
Reverse Diode
Inverse diode continuous forward current
T
Inverse diode direct current,pulsed
T
Inverse diode forward voltage
V
Reverse recovery time
V
Reverse recovery charge
V
C
C
GS
R
R
= 25 ˚C
= 25 ˚C
= 100 V, I
= 100 V, I
= 0 V, I
F
F =
F =
= 14 A
l
l
S,
S,
d i
d i
F
F
/d t = 100 A/µs
/d t = 100 A/µs
j
= 25˚C, unless otherwise specified
Q
Symbol
I
I
V
t
rr
S
SM
SD
rr
Page 4
-
-
-
-
min.
-
-
Values
typ.
-
1.1
140
0.7
-
max.
-
5.5
22
1.7
BUZ 73AL
2009-04-01
V
ns
µC
Unit
A