BUZ73L Infineon Technologies, BUZ73L Datasheet - Page 4

• Manufacturer Part Number: BUZ73L
• Description: MOSFET N-CH 200V 7A TO-220AB
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ73L

• Package / Case: TO-220AB
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 3.5A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 840pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 5 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Power Dissipation: 40000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BUZ73L; BUZ73LIN; BUZ73LX; BUZ73LXK; SP000011374

Electrical Characteristics, at T
Rev. 2.3
Parameter
Reverse Diode
Inverse diode continuous forward current
T
Inverse diode direct current,pulsed
T
Inverse diode forward voltage
V
Reverse recovery time
V
Reverse recovery charge
V
C
C
GS
R
R
= 25 ˚C
= 25 ˚C
= 100 V, I
= 100 V, I
= 0 V, I
F
F =
F =
= 14 A
l
l
S,
S,
d i
d i
F
F
/d t = 100 A/µs
/d t = 100 A/µs
j
= 25˚C, unless otherwise specified
Page 4
Q
Symbol
I
I
V
t
rr
S
SM
SD
rr
-
-
-
-
min.
-
-
Values
typ.
-
1.1
140
0.7
-
max.
-
7
28
1.7
BUZ 73L
2009-03-31
V
ns
µC
Unit
A