IRFS644BYDTU_AS001 Fairchild Semiconductor, IRFS644BYDTU_AS001 Datasheet - Page 4

• Manufacturer Part Number: IRFS644BYDTU_AS001
• Description: MOSFET N-CH 250V 14A TO-220F
• Manufacturer: Fairchild Semiconductor

Specifications of IRFS644BYDTU_AS001

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1600pF @ 25V
• Power - Max: 43W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
15
12
9
6
3
0
Figure 9-1. Maximum Safe Operating Area
25
10
1.2
1.1
1.0
0.9
0.8
10
10
10
-100
-1
2
1
0
Figure 7. Breakdown Voltage Variation
10
0
Figure 10. Maximum Drain Current
50
-50
vs Case Temperature
T
T
V
C
vs Temperature
J
, Case Temperature [ ℃ ]
, Junction Temperature [
DS
Operation in This Area
is Limited by R
0
, Drain-Source Voltage [V]
※ Notes :
for IRF644B
75
10
1. T
2. T
3. Single Pulse
1
C
J
= 150
= 25
o
C
DS(on)
o
C
50
100
DC
10 ms
100
(Continued)
o
C]
1 ms
※ Notes :
10
1. V
2. I
125
2
D
100 s
G S
= 250 μ A
= 0 V
150
150
200
Figure 9-2. Maximum Safe Operating Area
10
10
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
-2
-100
2
1
0
10
0
Figure 8. On-Resistance Variation
-50
V
T
vs Temperature
J
DS
, Junction Temperature [
for IRFS644B
0
, Drain-Source Voltage [V]
※ Notes :
Operation in This Area
is Limited by R
10
1. T
2. T
3. Single Pulse
1
C
J
= 150
= 25
o
C
o
C
50
DS(on)
DC
100 ms
10 ms
100
o
C]
1 ms
10
2
100 s
※ Notes :
1. V
2. I
150
D
GS
= 7.0 A
= 10 V
Rev. A, November 2001
200