BSS192PE6327 Infineon Technologies, BSS192PE6327 Datasheet - Page 7

• Manufacturer Part Number: BSS192PE6327
• Description: MOSFET P-CH 250V 190MA SOT-89
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS192PE6327

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 Ohm @ 190mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 190mA
• Vgs(th) (max) @ Id: 2V @ 130µA
• Gate Charge (qg) @ Vgs: 6.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 104pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS192PE6327INTR

13 Typ. gate charge
V
parameter: I
GS
-16
-12
-10
= f (Q
V
-8
-6
-4
-2
0
0
BSS 192 P
20%
50%
80%
Gate
1
D
= -0.19 A pulsed, T j = 25 °C
)
2
3
4
5
6
nC
|Q
Preliminary data
G
|
7.5
Page 7
14 Drain-source breakdown voltage
V
(BR)DSS
-300
-285
-280
-275
-270
-265
-260
-255
-250
-245
-240
-235
-230
-225
V
-60
BSS 192 P
= f (T
-20
j
)
20
60
100
BSS 192 P
2002-07-25
°C
T
j
180