BSP135 E6906 Infineon Technologies, BSP135 E6906 Datasheet
BSP135 E6906
Specifications of BSP135 E6906
SP000055417
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BSP135 E6906 Summary of contents
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SIPMOS Small-Signal-Transistor Features • N-channel • Depletion mode • dv /dt rated • Available with V indicator on reel GS(th) • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 Type Package BSP135 PG-SOT22 BSP135 PG-SOT22 Maximum ...
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Parameter Thermal characteristics Thermal resistance, junction - soldering point (pin 4) SMD version, device on PCB Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source cutoff current Gate-source leakage current On-state drain current Drain-source on-state resistance ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...
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Power dissipation P =f(T ) tot A 2 1 Safe operating area I =f =25 ° parameter limited by on-state resistance ...
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Typ. output characteristics I =f =25 ° parameter 0.25 0.2 0.15 0.1 0. Typ. transfer characteristics I =f |>2 ...
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Drain-source on-state resistance R =f =0. DS(on 160 140 120 100 80 % -60 - Threshold voltage bands I =f ...
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Forward characteristics of reverse diode I =f parameter °C 10 150 ° 0 Drain-source breakdown voltage V =f =250 µA BR(DSS) ...
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Package Outline: Footprint: Dimensions in mm Rev. 1.31 Packaging: page 8 BSP135 2010-07-19 ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...