BSP135 Infineon Technologies, BSP135 Datasheet
BSP135
Specifications of BSP135
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BSP135 Summary of contents
Page 1
... =25 °C tot stg page 1 BSP135 600 60 0.02 PG-SOT223 Marking Packaging Marking Packaging BSP135 Non dry BSP135 Non dry BSP135 Non dry BSP135 Non dry Value Unit 0.12 A 0.10 0.48 6 kV/µs ±20 V 1A(>250V,<500V) 1.8 W -55 ... 150 °C 55/150/56 2012-03- ...
Page 2
... V DSS =0.01A DS(on = =0. |>2 DS(on)max =0 =94 µA GS(th (single layer, 70 µm thick) copper area for page 2 BSP135 Values min. typ. max 115 600 - - -2 100 ...
Page 3
... plateau =25 ° S,pulse V =- =0. =25 ° =300 /dt =100 A/µ page 3 BSP135 Values Unit min. typ. max 146 3.4 5.1 - 5.4 8 5.6 8 182 273 - 0.24 0. 2.0 3.0 - 3.7 4.9 - 0.20 - ...
Page 4
... 0.15 0.1 0.05 0 120 160 0 4 Max. transient thermal impedance Z =f(t ) thJA p parameter µs 100 µ 0.1 0.05 0. page 4 BSP135 ≥ 120 T [° single pulse - [s] p 2012-03-20 160 2 10 ...
Page 5
... DS(on)max 0.25 0.2 0.15 0.1 0. [V] GS Rev. 1.32 6 Typ. drain-source on resistance R =f(I DS(on) D parameter: V 100 0 0 -0 Typ. forward transconductance g =f 0.2 0.15 0.1 0. 0.00 page =25 ° -0.2 V 0 -0.1 V 0.1 V 0.04 0.08 0.12 0.16 I [A] D =25 °C 0.04 0.08 I [A] D 2012-03-20 BSP135 0.2 0.12 ...
Page 6
... Typ. capacitances C =f µ -0.5 page =94 µ typ 100 T [° MHz [V] DS BSP135 140 180 Ciss Coss Crss 30 2012-03-20 ...
Page 7
... T [°C] j Rev. 1.32 15 Typ. gate charge V =f(Q GS gate parameter 150 °C, 98% 25 ° 100 140 180 page =0.1 A pulsed D DD 0.5 VDS(max) 0.2 VDS(max) 0.8 VDS(max [nC] gate 2012-03-20 BSP135 5 ...
Page 8
... Package Outline: Footprint: Dimensions in mm Rev. 1.32 Packaging: page 8 BSP135 2012-03-20 ...
Page 9
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.32 page 9 BSP135 2012-03-20 ...