BSP297 E6327 Infineon Technologies, BSP297 E6327 Datasheet - Page 4
![MOSFET N-CH 200V 660MA SOT-223](/photos/5/51/55179/448-sot-223_sml.jpg)
BSP297 E6327
Manufacturer Part Number
BSP297 E6327
Description
MOSFET N-CH 200V 660MA SOT-223
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSP297_E6327.pdf
(8 pages)
Specifications of BSP297 E6327
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.8 Ohm @ 660mA, 10v
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
660mA
Vgs(th) (max) @ Id
1.8V @ 400µA
Gate Charge (qg) @ Vgs
16.1nC @ 10V
Input Capacitance (ciss) @ Vds
357pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSP297E6327T
SP000011108
SP000011108
1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
10
10
10
= f (T
10
10
W
1.9
1.6
1.4
1.2
0.8
0.6
0.4
0.2
A
-1
-2
-3
1
0
1
0
10
0
BSP297
BSP297
0
DS
A
20
)
)
40
10
60
1
A
= 25 °C
80
100
10
DC
2
120
t p = 100.0µs
1 ms
10 ms
°C
V
T
V
Rev. 2.1
A
DS
160
10
Page 4
3
2 Drain current
I
parameter: V
4 Transient thermal impedance
Z
parameter : D = t
D
thJA
= f (T
K/W
10
10
0.75
0.55
0.45
0.35
0.25
0.15
0.05
10
10
10
0.6
0.5
0.4
0.3
0.2
0.1
A
= f (t
-1
-2
0
2
1
0
10
0
BSP297
BSP297
A
-5
)
10
p
20
)
single pulse
-4
GS
10
40
³ 10 V
-3
p
10
/T
60
-2
10
80
-1
10
100
0
10
2009-08-18
120
1
10
D = 0.50
BSP297
2
°C
0.20
0.10
0.05
0.02
0.01
T
t
p
A
s
160
10
4