BSS169 E6327 Infineon Technologies, BSS169 E6327 Datasheet - Page 2

• Manufacturer Part Number: BSS169 E6327
• Description: MOSFET N-CH 100V 170MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS169 E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 170mA
• Vgs(th) (max) @ Id: 1.8V @ 50µA
• Gate Charge (qg) @ Vgs: 2.8nC @ 7V
• Input Capacitance (ciss) @ Vds: 68pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS169E6327XT; SP000011172

Rev. 1.3
2)
Parameter
Thermal characteristics
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cutoff current
Gate-source leakage current
On-state drain current
Drain-source on-state resistance
Transconductance
Threshold voltage V
J
K
L
M
N
Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific
band cannot be ordered separately.
GS(th)
sorted in bands
j
=25 °C, unless otherwise specified
Symbol Conditions
R
V
V
I
I
I
R
g
V
D(off)
GSS
DSS
fs
(BR)DSS
GS(th)
GS(th)
thJA
DS(on)
2)
minimal footprint
V
V
V
V
V
V
V
V
V
V
|V
I
V
D
GS
DS
DS
GS
DS
GS
GS
GS
GS
GS
DS
=0.14 A
DS
page 2
=3 V, I
=100 V,
=100 V,
=3 V, I
=-10 V, I
=-10 V, T
=-10 V, T
=20 V, V
=0 V, V
=0 V, I
=10 V, I
|>2|I
D
|R
D
D
D
DS
=50 µA
=0.05 A
=50 µA
D
DS(on)max
D
DS
=0.17 A
j
j
=10 V
=250 µA
=25 °C
=125 °C
=0 V
,
-2.15
-2.45
min.
0.10
-2.9
-2.3
-2.6
100
90
-2
-
-
-
-
-
-
Values
0.19
typ.
-2.2
5.3
2.9
-
-
-
-
-
-
-
-
-
-
-
max.
-1.95
-2.25
350
-1.8
-1.8
-2.1
-2.4
0.1
10
12
10
6
-
-
-
BSS169
2007-02-07
Unit
K/W
V
µA
nA
mA
Ω
S
V