BSS169 E6327 Infineon Technologies, BSS169 E6327 Datasheet - Page 7

• Manufacturer Part Number: BSS169 E6327
• Description: MOSFET N-CH 100V 170MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS169 E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 170mA
• Vgs(th) (max) @ Id: 1.8V @ 50µA
• Gate Charge (qg) @ Vgs: 2.8nC @ 7V
• Input Capacitance (ciss) @ Vds: 68pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS169E6327XT; SP000011172

Rev. 1.3
13 Forward characteristics of reverse diode
I
parameter: T
16 Drain-source breakdown voltage
V
F
=f(V
BR(DSS)
10
10
10
10
120
100
10
80
SD
-1
-2
-3
-4
0
=f(T
-60
)
0
j
); I
j
-20
D
=250 µA
150 °C
0.5
20
V
T
SD
j
60
[°C]
[V]
25 °C
150 °C, 98%
100
1
140
25 °C, 98%
180
1.5
page 7
15 Typ. gate charge
V
parameter: V
GS
=f(Q
-2
-4
8
6
4
2
0
0
gate
); I
DD
D
=0.12 A pulsed
0.5
1
Q
0.2 VDS(max)
gate
[nC]
1.5
0.8 VDS(max)
0.5 VDS(max)
2
2007-02-07
BSS169
2.5