SPB80N06S2L-09 Infineon Technologies, SPB80N06S2L-09 Datasheet - Page 5

• Manufacturer Part Number: SPB80N06S2L-09
• Description: MOSFET N-CH 55V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPB80N06S2L-09

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 52A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 125µA
• Gate Charge (qg) @ Vgs: 105nC @ 10V
• Input Capacitance (ciss) @ Vds: 3480pF @ 25V
• Power - Max: 190W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000013582; SPB80N06S2L09T

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
190
160
140
120
100
160
120
100
A
A
80
60
40
20
80
60
40
20
0
0
0
0
DS
SPP80N06S2L-09
GS
P
0.5
tot
); T
); V
1
= 190W
p
p
i
= 80 µs
= 80 µs
1
j
=25°C
DS
2
1.5
≥ 2 x I
3
2
D
2.5
4
x R
DS(on)max
3
5
3.5
6
g
e
c
a
h
f
d
b
V GS [V]
4
a
b
c
d
e
f
g
h
i
V
V
V
V
DS
10.0
GS
2.5
2.8
3.0
3.3
3.5
3.9
4.1
4.5
8
5
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
m Ω
= f(I
100
S
28
24
22
20
18
16
14
12
10
80
70
60
50
40
30
20
10
8
6
4
2
0
0
0
0
D
SPP80N06S2L-09
= f (I
V
); T
GS
3.3
d
10
20
[V] =
3.5
j
e
=25°C
D
fs
GS
)
20
d
3.9
40
f
g
4.1
30
e
60
4.5
h
40
SPB80N06S2L-09
SPP80N06S2L-09
80
10.0
i
50
f
100 120
60
g
2003-05-09
70
140
I
A
h
D
I
A
D
i
170
90