BUZ30A H3045A Infineon Technologies, BUZ30A H3045A Datasheet - Page 8
![MOSFET N-CH 200V 21A TO-263](/photos/5/62/56245/buz30a_l3045a_sml.jpg)
BUZ30A H3045A
Manufacturer Part Number
BUZ30A H3045A
Description
MOSFET N-CH 200V 21A TO-263
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BUZ30A_H3045A.pdf
(10 pages)
Specifications of BUZ30A H3045A
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 13.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
1900pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
BUZ30A L3045A
BUZ30A L3045A
BUZ30AH3045AINTR
BUZ30AL3045AINTR
BUZ30AL3045AINTR
BUZ30AL3045AXT
SP000102176
SP000736082
BUZ30A L3045A
BUZ30AH3045AINTR
BUZ30AL3045AINTR
BUZ30AL3045AINTR
BUZ30AL3045AXT
SP000102176
SP000736082
Avalanche energy E
parameter: I
R
Drain-source breakdown voltage
V
V
Rev. 2.5
(BR)DSS
E
(BR)DSS
GS
AS
= 25 Ω , L = 1.53 mH
230
500
400
350
300
250
200
150
100
240
225
220
215
210
205
200
195
190
185
180
mJ
50
V
0
-60
20
= ƒ ( T
D
40
= 21 A, V
-20
j
)
60
20
AS
DD
80
= ƒ ( T
= 50 V
60
100
j
)
120
100
˚C
T
T
˚C
j
j
160
160
Page 8
Typ. gate charge
V
parameter: I
V
GS
GS
= ƒ ( Q
16
12
10
V
8
6
4
2
0
0
Gate
10
D puls
)
20
= 32 A
30
0,2
40
V
DS max
50
60
70
BUZ 30A H
0,8
80
2010-07-02
Q
V
Gate
DS max
nC 100