BUZ30A H3045A Infineon Technologies, BUZ30A H3045A Datasheet - Page 8

• Manufacturer Part Number: BUZ30A H3045A
• Description: MOSFET N-CH 200V 21A TO-263
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ30A H3045A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 13.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1900pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: BUZ30A L3045A; BUZ30A L3045A; BUZ30AH3045AINTR; BUZ30AL3045AINTR; BUZ30AL3045AINTR; BUZ30AL3045AXT; SP000102176; SP000736082

Avalanche energy E
parameter: I
R
Drain-source breakdown voltage
V
V
Rev. 2.5
(BR)DSS
E
(BR)DSS
GS
AS
= 25 Ω , L = 1.53 mH
230
500
400
350
300
250
200
150
100
240
225
220
215
210
205
200
195
190
185
180
mJ
50
V
0
-60
20
= ƒ ( T
D
40
= 21 A, V
-20
j
)
60
20
AS
DD
80
= ƒ ( T
= 50 V
60
100
j
)
120
100
˚C
T
T
˚C
j
j
160
160
Page 8
Typ. gate charge
V
parameter: I
V
GS
GS
= ƒ ( Q
16
12
10
V
8
6
4
2
0
0
Gate
10
D puls
)
20
= 32 A
30
0,2
40
V
DS max
50
60
70
BUZ 30A H
0,8
80
2010-07-02
Q
V
Gate
DS max
nC 100