BUZ30A Infineon Technologies, BUZ30A Datasheet
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Manufacturer Part Number
BUZ30A
Description
MOSFET N-CH 200V 21A TO-220AB
Manufacturer
Infineon Technologies
Package / Case
TO-220AB
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 13.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
1900pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.13 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
21 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BUZ30AIN BUZ30AX BUZ30AXK BUZ30AXTIN BUZ30AXTIN SP000011336
Available stocks
Part Number:
BUZ30A E3045A
Part Number:
BUZ30A H3045A
Manufacturer:
INFINEON/英飞凌
SIPMOS
Rev. 2.3
• N channel
• Enhancement mode
• Avalanche-rated
Type
BUZ 30A
Maximum Ratings
Parameter
Continuous drain current
T
Pulsed drain current
T
Avalanche current,limited by T
Avalanche energy,periodic limited by T
Avalanche energy, single pulse
I
L = 1.53 mH, T
Gate source voltage
Power dissipation
T
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
D
C
C
C
= 21 A, V
= 26 ˚C
= 25 ˚C
= 25 ˚C
®
Power Transistor
DD
j
= 50 V, R
= 25 ˚C
V
200 V
DS
GS
= 25
jmax
I
21 A
D
Ω
jmax
R
0.13
DS(on
Ω
)
Page 1
P
T
T
R
R
Symbol
I
I
I
E
E
V
D
Dpuls
AR
j
stg
AR
AS
GS
tot
thJA
thJC
Package
PG-TO-220-3
Pin 1
G
55 / 150 / 56
-55 ... + 150
-55 ... + 150
Values
±
≤
E
450
125
75
Pb-free
Yes
12
21
84
21
20
1
Pin 2
D
BUZ 30A
2009-04-07
˚C
K/W
Unit
A
mJ
V
W
Pin 3
S
Related parts for BUZ30A
BUZ30A Summary of contents
SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type V DS BUZ 30A 200 V Maximum Ratings Parameter Continuous drain current ˚C C Pulsed drain current ˚C C Avalanche current,limited ...
Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA ˚ Gate threshold voltage DS, D Zero ...
Electrical Characteristics Parameter Dynamic Characteristics Transconductance ≥ 13 DS(on)max, D Input capacitance MHz GS DS Output ...
Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current ˚C C Inverse diode direct current,pulsed ˚C C Inverse diode forward voltage ...
Power dissipation = ƒ tot C 130 W 110 P tot 100 Safe operating area = ƒ ...
Typ. output characteristics = ƒ parameter µ 125W tot ...
Drain-source on-resistance = ƒ (on) j parameter 13 0.50 Ω 0. (on) 0.35 0.30 0.25 0.20 98% typ 0.15 0.10 0.05 0.00 -60 -20 ...
T Avalanche energy E AS parameter Ω 1. 500 mJ 400 E AS 350 300 250 200 150 100 ...
PG-TO220-3 Rev. 2.3 Page 9 BUZ 30A 2009-04-07 ...
Rev. 2.3 Page 10 BUZ 30A 2009-04-07 ...
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