BUZ30A Infineon Technologies, BUZ30A Datasheet - Page 10
![MOSFET N-CH 200V 21A TO-220AB](/photos/5/30/53095/448-to-220ab_sml.jpg)
BUZ30A
Manufacturer Part Number
BUZ30A
Description
MOSFET N-CH 200V 21A TO-220AB
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BUZ30A.pdf
(10 pages)
Specifications of BUZ30A
Package / Case
TO-220AB
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 13.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
1900pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.13 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
21 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BUZ30AIN
BUZ30AX
BUZ30AXK
BUZ30AXTIN
BUZ30AXTIN
SP000011336
BUZ30AX
BUZ30AXK
BUZ30AXTIN
BUZ30AXTIN
SP000011336
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Company
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Manufacturer
Quantity
Price
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BUZ 30A
Page 10
2009-04-07
Rev. 2.3