BUZ30A Infineon Technologies, BUZ30A Datasheet - Page 5

• Manufacturer Part Number: BUZ30A
• Description: MOSFET N-CH 200V 21A TO-220AB
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ30A

• Package / Case: TO-220AB
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 13.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1900pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.13 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BUZ30AIN; BUZ30AX; BUZ30AXK; BUZ30AXTIN; BUZ30AXTIN; SP000011336

Power dissipation
P
P
Safe operating area
I
parameter: D = 0.01 , T
Rev. 2.3
D
tot
I
tot
D
= ƒ ( V
= ƒ ( T
10
10
10
10
10
130
110
100
90
80
70
60
50
40
30
20
10
W
A
-1
0
3
2
1
0
DS
10
0
C
0
)
)
20
40
10
60
1
C
= 25˚C
80
100
10
DC
2
120
t p = 18.0µs
100 µs
1 ms
10 ms
V
T
˚C
DS
C
V
160
Page 5
Z
Transient thermal impedance
Z
parameter: D = t
Drain current
I
parameter: V
thJC
D
I
th JC
D
= ƒ ( T
K/W
10
10
10
10
10
10
10
= ƒ ( t
22
18
16
14
12
10
-1
-2
-3
-4
-5
A
1
0
8
6
4
2
0
10
C
0
)
-7
p
)
20
10
single pulse
GS
-6
p
≥ 10 V
40
/ T
10
-5
60
10
-4
80
10
100
-3
10
120
-2
BUZ 30A
D = 0.50
2009-04-07
10
t
0.20
0.10
0.05
0.02
0.01
p
T
˚C
-1
C
s
10
160
0