BF245C,112 NXP Semiconductors, BF245C,112 Datasheet - Page 10

• Manufacturer Part Number: BF245C,112
• Description: JFET N-CH 30V 25MA TO-92
• Manufacturer: NXP Semiconductors

Specifications of BF245C,112

• Package / Case: TO-92-3 (Standard Body), TO-226
• Current Rating: 25mA
• Frequency: 100MHz
• Transistor Type: N-Channel JFET
• Noise Figure: 1.5dB
• Voltage - Test: 15V
• Configuration: Single
• Minimum Operating Temperature: - 65 C
• Mounting Style: Through Hole
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Cutoff Voltage: - 0.25 V to - 8 V
• Gate-source Breakdown Voltage: - 30 V
• Maximum Drain Gate Voltage: - 30 V
• Continuous Drain Current: 25 mA
• Drain Current (idss At Vgs=0): 12 mA to 25 mA
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Current - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933106600112::BF245CP::BF245CP

NXP Semiconductors
PACKAGE OUTLINE
1996 Jul 30
Plastic single-ended leaded (through hole) package; 3 leads (on-circle)
N-channel silicon field-effect transistors
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
UNIT
mm
SOT54 variant
VERSION
OUTLINE
D
5.2
5.0
A
0.48
0.40
d
b
E
3
1
2
0.66
0.55
b 1
IEC
b
1
0.45
0.38
c
4.8
4.4
D
JEDEC
1.7
1.4
d
REFERENCES
0
4.2
3.6
E
2.54
A
e
JEITA
scale
10
2.5
1.27
e 1
14.5
12.7
5 mm
L
L 2
L 1
L 1
max
2.5
(1)
BF245A; BF245B; BF245C
max
2.5
L 2
L
PROJECTION
EUROPEAN
Product specification
ISSUE DATE
SOT54 variant
04-06-28
05-01-10
c
b
e 1
e 1
e