BF245C,112 NXP Semiconductors, BF245C,112 Datasheet - Page 7

• Manufacturer Part Number: BF245C,112
• Description: JFET N-CH 30V 25MA TO-92
• Manufacturer: NXP Semiconductors

Specifications of BF245C,112

• Package / Case: TO-92-3 (Standard Body), TO-226
• Current Rating: 25mA
• Frequency: 100MHz
• Transistor Type: N-Channel JFET
• Noise Figure: 1.5dB
• Voltage - Test: 15V
• Configuration: Single
• Minimum Operating Temperature: - 65 C
• Mounting Style: Through Hole
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Cutoff Voltage: - 0.25 V to - 8 V
• Gate-source Breakdown Voltage: - 30 V
• Maximum Drain Gate Voltage: - 30 V
• Continuous Drain Current: 25 mA
• Drain Current (idss At Vgs=0): 12 mA to 25 mA
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Current - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933106600112::BF245CP::BF245CP

NXP Semiconductors
1996 Jul 30
handbook, halfpage
Fig.14 Common-source forward transfer admittance
N-channel silicon field-effect transistors
handbook, halfpage
(μA/V)
V
V
(mA/V)
DS
DS
g is
−b fs
g fs ,
10
10
= 15 V; V
= 15 V; V
10
1
3
2
Fig.12 Input admittance; typical values.
10
10
as a function of frequency; typical values.
8
6
4
2
0
10
GS
GS
= 0; T
= 0; T
amb
amb
= 25 C.
= 25 C.
−b fs
g fs
10
2
10
2
b is
g is
f (MHz)
f (MHz)
MGE778
MGE782
10
3
10
10
1
10
10
(mA/V)
2
−1
b is
3
7
handbook, halfpage
handbook, halfpage
(μA/V)
V
V
(μA/V)
g os
Fig.13 Common source reverse admittance as a
DS
DS
b rs
Fig.15 Common-source output admittance as a
10
10
10
10
10
= 15 V; V
= 15 V; V
10
10
1
3
2
4
3
2
10
10
function of frequency; typical values.
function of frequency; typical values.
GS
GS
BF245A; BF245B; BF245C
= 0; T
= 0; T
C rs
b rs
amb
amb
= 25 C.
= 25 C.
10
10
2
2
f (MHz)
b os
g os
f (MHz)
Product specification
MGE783
MGE780
10
10
3
3
10
1
10
10
10
1
10
10
(mA/V)
(pF)
C rs
b os
−1
−2
−1
−2