BF245C,112 NXP Semiconductors, BF245C,112 Datasheet - Page 8

• Manufacturer Part Number: BF245C,112
• Description: JFET N-CH 30V 25MA TO-92
• Manufacturer: NXP Semiconductors

Specifications of BF245C,112

• Package / Case: TO-92-3 (Standard Body), TO-226
• Current Rating: 25mA
• Frequency: 100MHz
• Transistor Type: N-Channel JFET
• Noise Figure: 1.5dB
• Voltage - Test: 15V
• Configuration: Single
• Minimum Operating Temperature: - 65 C
• Mounting Style: Through Hole
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Cutoff Voltage: - 0.25 V to - 8 V
• Gate-source Breakdown Voltage: - 30 V
• Maximum Drain Gate Voltage: - 30 V
• Continuous Drain Current: 25 mA
• Drain Current (idss At Vgs=0): 12 mA to 25 mA
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Current - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933106600112::BF245CP::BF245CP

NXP Semiconductors
1996 Jul 30
handbook, halfpage
handbook, halfpage
N-channel silicon field-effect transistors
Fig.18 Forward transfer admittance as a function of
V
V
DS
DS
(mA/V)
(pF)
C is
|y fs |
= 20 V; f = 1 MHz; T
= 15 V; f = 1 kHz; T
Fig.16 Input capacitance as a function of
8
6
4
2
0
6
4
2
0
drain current; typical values.
0
0
gate-source voltage; typical values.
BF245A
−2
5
amb
amb
typ
= 25 C.
= 25 C.
−4
BF245B
10
−6
15
−8
BF245C
I D (mA)
V GS (V)
MGE777
MGE791
−10
20
8
handbook, halfpage
handbook, halfpage
at I D = 10 nA
V
V
Fig.19 Gate-source cut-off voltage as a function of
Fig.17 Reverse transfer capacitance as a function
DS
DS
V GSoff
(pF)
C rs
(V)
= 20 V; f = 1 MHz; T
= 15 V; T
1.5
0.5
1
0
−10
of gate-source voltage; typical values.
drain current; typical values.
−8
−6
−4
−2
−0
j
0
BF245A; BF245B; BF245C
= 25 C.
BF245A
−2
amb
typ
= 25 C.
BF245B
−4
10
I DSS at V GS = 0 (mA)
−6
BF245C
Product specification
20
−8
V GS (V)
MGE781
−10
MGE784
30