BF245C,112 NXP Semiconductors, BF245C,112 Datasheet - Page 3

• Manufacturer Part Number: BF245C,112
• Description: JFET N-CH 30V 25MA TO-92
• Manufacturer: NXP Semiconductors

Specifications of BF245C,112

• Package / Case: TO-92-3 (Standard Body), TO-226
• Current Rating: 25mA
• Frequency: 100MHz
• Transistor Type: N-Channel JFET
• Noise Figure: 1.5dB
• Voltage - Test: 15V
• Configuration: Single
• Minimum Operating Temperature: - 65 C
• Mounting Style: Through Hole
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Cutoff Voltage: - 0.25 V to - 8 V
• Gate-source Breakdown Voltage: - 30 V
• Maximum Drain Gate Voltage: - 30 V
• Continuous Drain Current: 25 mA
• Drain Current (idss At Vgs=0): 12 mA to 25 mA
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Current - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933106600112::BF245CP::BF245CP

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum
THERMAL CHARACTERISTICS
STATIC CHARACTERISTICS
T
Note
1. Measured under pulse conditions: t
1996 Jul 30
V
V
V
I
I
P
T
T
R
V
V
V
I
I
j
D
G
DSS
GSS
SYMBOL
SYMBOL
SYMBOL
stg
j
DS
GDO
GSO
tot
= 25 C; unless otherwise specified.
(BR)GSS
GSoff
GS
N-channel silicon field-effect transistors
th j-a
10 mm  10 mm.
drain-source voltage
gate-drain voltage
gate-source voltage
drain current
gate current
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to ambient
thermal resistance from junction to ambient
gate-source breakdown voltage
gate-source cut-off voltage
gate-source voltage
drain current
gate cut-off current
BF245A
BF245B
BF245C
BF245A
BF245B
BF245C
PARAMETER
PARAMETER
PARAMETER
p
= 300 s;   0.02.
open source
open drain
up to T
up to T
I
I
I
V
V
V
G
D
D
DS
GS
GS
= 10 nA; V
= 200 A; V
= 1 A; V
= 15 V; V
= 20 V; V
= 20 V; V
amb
amb
3
CONDITIONS
CONDITIONS
= 75 C;
= 90 C; note 1
DS
DS
GS
in free air
DS
DS
DS
= 15 V
= 0
= 0; note 1
= 15 V
CONDITIONS
= 0
= 0; T
j
BF245A; BF245B; BF245C
= 125 C







65

30
0.25
0.4
1.6
3.2
2
6
12


MIN.
MIN.
VALUE
250
200
Product specification
30
30
30
25
10
300
300
+150
150

8.0
2.2
3.8
7.5
6.5
15
25
5
0.5
MAX.
MAX.
UNIT
K/W
K/W
mA
mA
mA
V
V
V
mW
mW
C
C
V
V
V
V
V
mA
mA
nA
A
UNIT
UNIT