BF1210,115 NXP Semiconductors, BF1210,115 Datasheet - Page 11

• Manufacturer Part Number: BF1210,115
• Description: MOSFET N-CH DUAL GATE 6V UMT6
• Manufacturer: NXP Semiconductors

Specifications of BF1210,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 31dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 0.9dB
• Current - Test: 19mA
• Voltage - Test: 5V
• Configuration: Dual
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 6V
• Power Gain (typ)@vds: 35@5V@Amp A/36@5V@Amp BdB
• Noise Figure (max): 1.9dB
• Package Type: SOT-363
• Pin Count: 6
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1@Amp A/3@5V@Gate 2@Amp A/1.9@5V@Gate 1@Amp B/3.4@5V@Gate 2@Amp BpF
• Output Capacitance (typ)@vds: 0.9@5V@Amp A/0.85@5V@Amp BpF
• Reverse Capacitance (typ): 0.02@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 180mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934060847115; BF1210 T/R; BF1210 T/R

NXP Semiconductors
Table 9.
V
Table 10.
V
Table 11.
Common source; T
BF1210_1
Product data sheet
f (MHz)
40
100
200
300
400
500
600
700
800
900
1000
f (MHz)
400
800
Symbol Parameter
C
C
C
C
G
NF
y
DS(A)
DS(A)
fs
iss(G1)
iss(G2)
oss
rss
tr
= 5 V; V
= 5 V; V
forward transfer admittance
input capacitance at gate1
input capacitance at gate2
output capacitance
reverse transfer capacitance f = 100 MHz
transducer power gain
noise figure
s
Magnitude
(ratio)
0.9861
0.9883
0.9844
0.9761
0.9635
0.9486
0.9305
0.9105
0.8911
0.8723
0.8521
Scattering parameters for amplifier A
Noise data for amplifier A
Dynamic characteristics for amplifier B
11
G2-S
G2-S
8.1.2 Scattering parameters for amplifier A
8.2 Noise data for amplifier A
8.3 Dynamic characteristics for amplifier B
amb
= 4 V; I
= 4 V; I
= 25 C; V
NF
0.9
1.2
D(A)
D(A)
min
Angle
(deg)
3.2
7.84
15.7
23.52
31.26
38.78
46.2
53.33
60.2
67.03
73.74
= 19 mA; V
= 19 mA, T
(dB)
G2-S
= 4 V; V
s
Magnitude
(ratio)
3.14
3.14
3.12
3.08
3.03
2.97
2.90
2.81
2.73
2.65
2.56
Conditions
T
f = 100 MHz
f = 100 MHz
f = 100 MHz
B
f = 11 MHz; G
f = 400 MHz; Y
f = 800 MHz; Y
21
j
S
DS(B)
amb
f = 200 MHz; G
f = 400 MHz; G
f = 800 MHz; G
= 25 C
= B
= 25 C; typical values.
DS(B)
S(opt)
= 0 V; V
Rev. 01 — 25 October 2006
(ratio)
0.749
0.688
= 5 V; I
opt
; B
S
L
G1-S(B)
S
S
= B
= 20 mS; B
= Y
= Y
Angle
(deg)
176.75
171.53
163.1
154.65
146.33
138.15
130.12
122.26
114.65
107.2
99.78
S
S
S
D(B)
L(opt)
= 2 mS; G
= 2 mS; G
= 3.3 mS; G
S(opt)
S(opt)
= 0 V; T
= 13 mA.
S
s
Magnitude
(ratio)
0.00054
0.00104
0.00205
0.00295
0.00375
0.00437
0.00483
0.0051
0.0052
0.00515
0.00498
= 0 S
12
L
L
amb
= 0.5 mS
= 1 mS
L
= 1 mS
= 25 C; typical values.
(deg)
23.7
48.65
Dual N-channel dual gate MOSFET
Angle
(deg)
87.97
87.69
80.77
76.33
72.34
67.97
64.86
62.13
59.88
58.8
58.03
[1]
[1]
[1]
[1]
[1]
Min
28
-
-
-
-
32
29
27
-
-
-
s
Magnitude
(ratio)
0.9934
0.9925
0.9918
0.9904
0.9888
0.9870
0.9847
0.9832
0.9817
0.9796
0.9785
22
r
0.667
0.583
n
(ratio)
Typ
33
1.9
3.4
0.85
20
36
33
31
4
0.9
1.2
© NXP B.V. 2006. All rights reserved.
BF1210
Max
43
2.4
-
-
-
40
37
35
-
1.5
1.9
Angle
(deg)
1.19
2.85
5.69
8.51
11.33
14.13
16.87
19.61
22.35
25.03
27.08
11 of 21
Unit
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB