BF1210,115 NXP Semiconductors, BF1210,115 Datasheet - Page 16

• Manufacturer Part Number: BF1210,115
• Description: MOSFET N-CH DUAL GATE 6V UMT6
• Manufacturer: NXP Semiconductors

Specifications of BF1210,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 31dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 0.9dB
• Current - Test: 19mA
• Voltage - Test: 5V
• Configuration: Dual
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 6V
• Power Gain (typ)@vds: 35@5V@Amp A/36@5V@Amp BdB
• Noise Figure (max): 1.9dB
• Package Type: SOT-363
• Pin Count: 6
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1@Amp A/3@5V@Gate 2@Amp A/1.9@5V@Gate 1@Amp B/3.4@5V@Gate 2@Amp BpF
• Output Capacitance (typ)@vds: 0.9@5V@Amp A/0.85@5V@Amp BpF
• Reverse Capacitance (typ): 0.02@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 180mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934060847115; BF1210 T/R; BF1210 T/R

NXP Semiconductors
BF1210_1
Product data sheet
Fig 28. Amplifier B: input admittance as a function of
Fig 30. Amplifier B: reverse transfer admittance and
b
(mS)
(mS)
is
Y
, g
10
10
rs
10
10
10
10
10
is
1
1
2
1
2
3
2
V
I
frequency; typical values
V
I
phase as a function of frequency; typical values
10
D(B)
10
D(B)
DS(B)
DS(B)
= 13 mA.
= 13 mA.
= 5 V; V
= 5 V; V
G2-S
G2-S
= 4 V; V
= 4 V; V
10
10
2
2
Y
b
g
DS(A)
DS(A)
is
is
rs
rs
f (MHz)
f (MHz)
= 0 V;
= 0 V;
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Rev. 01 — 25 October 2006
10
10
3
3
10
10
10
1
(deg)
3
2
rs
Fig 29. Amplifier B: forward transfer admittance and
Fig 31. Amplifier B: output admittance as a function of
b
os
(mS)
(mS)
Y
10
10
, g
fs
10
10
10
os
1
1
2
1
2
V
I
phase as a function of frequency; typical values
V
I
frequency; typical values
10
10
D(B)
D(B)
DS(B)
DS(B)
= 13 mA.
= 13 mA.
= 5 V; V
= 5 V; V
Dual N-channel dual gate MOSFET
G2-S
G2-S
= 4 V; V
= 4 V; V
10
10
2
2
b
g
Y
DS(A)
os
os
DS(A)
fs
fs
f (MHz)
f (MHz)
= 0 V;
= 0 V;
© NXP B.V. 2006. All rights reserved.
001aaf503
001aaf505
BF1210
10
10
3
3
10
(deg)
10
1
16 of 21
2
fs