BF1210,115 NXP Semiconductors, BF1210,115 Datasheet - Page 3

• Manufacturer Part Number: BF1210,115
• Description: MOSFET N-CH DUAL GATE 6V UMT6
• Manufacturer: NXP Semiconductors

Specifications of BF1210,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 31dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 0.9dB
• Current - Test: 19mA
• Voltage - Test: 5V
• Configuration: Dual
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 6V
• Power Gain (typ)@vds: 35@5V@Amp A/36@5V@Amp BdB
• Noise Figure (max): 1.9dB
• Package Type: SOT-363
• Pin Count: 6
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1@Amp A/3@5V@Gate 2@Amp A/1.9@5V@Gate 1@Amp B/3.4@5V@Gate 2@Amp BpF
• Output Capacitance (typ)@vds: 0.9@5V@Amp A/0.85@5V@Amp BpF
• Reverse Capacitance (typ): 0.02@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 180mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934060847115; BF1210 T/R; BF1210 T/R

NXP Semiconductors
4. Marking
5. Limiting values
BF1210_1
Product data sheet
Table 4.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Type number
BF1210
Symbol
Per MOSFET
V
I
I
I
P
T
T
D
G1
G2
Fig 1. Power derating curve
stg
j
DS
tot
T
sp
is the temperature at the soldering point of the source lead.
Marking
Limiting values
Parameter
drain-source voltage
drain current
gate1 current
gate2 current
total power dissipation
storage temperature
junction temperature
(mW)
P
Rev. 01 — 25 October 2006
tot
250
200
150
100
50
0
0
Marking
*AB
50
Conditions
DC
T
100
sp
107 C
Dual N-channel dual gate MOSFET
150
T
001aac193
sp
[1]
(˚C)
Min
-
-
-
-
-
-
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
65
200
Max
6
30
180
+150
150
© NXP B.V. 2006. All rights reserved.
10
10
BF1210
Unit
V
mA
mA
mA
mW
C
C
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