BF1210,115 NXP Semiconductors, BF1210,115 Datasheet - Page 15

• Manufacturer Part Number: BF1210,115
• Description: MOSFET N-CH DUAL GATE 6V UMT6
• Manufacturer: NXP Semiconductors

Specifications of BF1210,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 31dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 0.9dB
• Current - Test: 19mA
• Voltage - Test: 5V
• Configuration: Dual
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 6V
• Power Gain (typ)@vds: 35@5V@Amp A/36@5V@Amp BdB
• Noise Figure (max): 1.9dB
• Package Type: SOT-363
• Pin Count: 6
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1@Amp A/3@5V@Gate 2@Amp A/1.9@5V@Gate 1@Amp B/3.4@5V@Gate 2@Amp BpF
• Output Capacitance (typ)@vds: 0.9@5V@Amp A/0.85@5V@Amp BpF
• Reverse Capacitance (typ): 0.02@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 180mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934060847115; BF1210 T/R; BF1210 T/R

NXP Semiconductors
BF1210_1
Product data sheet
Fig 25. Amplifier B: typical gain reduction as a function
Fig 27. Amplifier B: typical drain current as a function of gain reduction; typical values
reduction
gain
(dB)
20
40
60
0
V
I
of the AGC voltage; typical values
V
D(nom)(B)
0
DS(B)
DS(B)
= 5 V; V
= V
= 13 mA; T
GG
1
= 5 V; V
G2-S(nom)
amb
G2-S(nom)
2
= 4 V; R
= 25 C; see
(mA)
= 4 V; R
I
D
G1(B)
15
12
9
6
3
0
3
0
V
= 150 k ;
Figure
AGC
G1(B)
001aaf499
(V)
= 150 k ; I
32.
10
Rev. 01 — 25 October 2006
4
20
D(nom)(B)
Fig 26. Amplifier B: unwanted voltage for 1 %
30
= 13 mA; f = 50 MHz; T
(dB V)
V
unw
110
105
100
95
90
85
gain reduction (dB)
V
I
T
cross modulation as a function of gain
reduction; typical values
D(nom)(B)
0
amb
DS(B)
40
001aaf501
= 25 C; see
= 5 V; V
= 13 mA; f
10
50
Dual N-channel dual gate MOSFET
G2-S(nom)
amb
Figure
20
w
= 25 C; see
= 50 MHz; f
= 4 V; R
32.
30
G1(B)
unw
gain reduction (dB)
Figure
© NXP B.V. 2006. All rights reserved.
40
= 60 MHz;
= 150 k ;
001aaf500
BF1210
32.
50
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