BF1102R,115 NXP Semiconductors, BF1102R,115 Datasheet - Page 11

MOSFET N-CH 7V 40MA SOT363R

BF1102R,115

Manufacturer Part Number
BF1102R,115
Description
MOSFET N-CH 7V 40MA SOT363R
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF1102R,115

Package / Case
SC-70-6, SC-88, SOT-363
Current Rating
40mA
Frequency
800MHz
Transistor Type
N-Channel Dual Gate
Noise Figure
2dB
Current - Test
15mA
Voltage - Test
5V
Configuration
Dual
Continuous Drain Current
0.04 A
Drain-source Breakdown Voltage
7 V
Gate-source Breakdown Voltage
+/- 6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
200 mW
Transistor Polarity
N-Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934055823115::BF1102R T/R::BF1102R T/R
NXP Semiconductors
PACKAGE OUTLINE
2000 Apr 11
Plastic surface-mounted package; 6 leads
Dual N-channel dual gate MOS-FETs
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT363
1.1
0.8
A
max
0.1
A 1
6
1
0.30
0.20
b p
y
IEC
pin 1
index
e 1
0.25
0.10
c
D
e
5
2
2.2
1.8
b p
D
JEDEC
1.35
1.15
E
4
3
REFERENCES
0
1.3
e
w
B
M
B
0.65
e
1
SC-88
JEITA
scale
11
1
H E
2.2
2.0
A
0.45
0.15
L p
A 1
2 mm
0.25
0.15
Q
H E
E
0.2
v
detail X
PROJECTION
0.2
EUROPEAN
w
L p
BF1102; BF1102R
Q
0.1
y
A
c
Product specification
X
v
ISSUE DATE
M
04-11-08
06-03-16
A
SOT363

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