BF1102R,115 NXP Semiconductors, BF1102R,115 Datasheet - Page 9

• Manufacturer Part Number: BF1102R,115
• Description: MOSFET N-CH 7V 40MA SOT363R
• Manufacturer: NXP Semiconductors

Specifications of BF1102R,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Current Rating: 40mA
• Frequency: 800MHz
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 2dB
• Current - Test: 15mA
• Voltage - Test: 5V
• Configuration: Dual
• Continuous Drain Current: 0.04 A
• Drain-source Breakdown Voltage: 7 V
• Gate-source Breakdown Voltage: +/- 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055823115::BF1102R T/R::BF1102R T/R

NXP Semiconductors
2000 Apr 11
handbook, halfpage
handbook, full pagewidth
crosstalk
Dual N-channel dual gate MOS-FETs
Active amplifier: V
Non-active amplifier: V
Source and load impedances: 50  (both amplifiers).
T
Fig.19 Crosstalk as a function of frequency:
level
(dB)
amb
−20
−40
−60
−80
= 25 C.
0
0
Output level of non-active amplifier related
to output level of active amplifier; typical
values.
200
DS
= 5 V; V
DS
= V
400
G2
G1-S
= 4 V; I
R GEN
= 0 V.
50 Ω
V I
Fig.20 Cross-modulation test set-up (for one MOS-FET).
600
D
= 15 mA.
50 Ω
R2
800
f (MHz)
MCD972
4.7 nF
C2
1000
V GG
10 kΩ
R G1
R1
V AGC
4.7 nF
C1
9
DUT
V DS
L1
≈
4.7 nF
4.7 nF
2.2 μH
C3
C4
MGS315
R L
50 Ω
BF1102; BF1102R
Product specification