BF1102R,115 NXP Semiconductors, BF1102R,115 Datasheet - Page 14

MOSFET N-CH 7V 40MA SOT363R

BF1102R,115

Manufacturer Part Number
BF1102R,115
Description
MOSFET N-CH 7V 40MA SOT363R
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF1102R,115

Package / Case
SC-70-6, SC-88, SOT-363
Current Rating
40mA
Frequency
800MHz
Transistor Type
N-Channel Dual Gate
Noise Figure
2dB
Current - Test
15mA
Voltage - Test
5V
Configuration
Dual
Continuous Drain Current
0.04 A
Drain-source Breakdown Voltage
7 V
Gate-source Breakdown Voltage
+/- 6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
200 mW
Transistor Polarity
N-Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934055823115::BF1102R T/R::BF1102R T/R
Printed in The Netherlands
© NXP B.V. 2010
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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
R77/03/pp 14
Date of release: 2000 Apr 11

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