BLF573S,112 NXP Semiconductors, BLF573S,112 Datasheet
BLF573S,112
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BLF573S,112 Summary of contents
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BLF573S HF / VHF power LDMOS transistor Rev. 02 — 17 February 2009 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin [1] Connected to flange. 3. Ordering information Table 3. Type number BLF573S 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg Thermal characteristics Table 5. Symbol R th(j-c) [1] R th(j-c) BLF573S_2 Product data sheet Pinning ...
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... NXP Semiconductors 6. Characteristics Table unless otherwise specified. j Symbol Parameter V (BR)DSS V GS(th) V GSq I DSS I DSX I GSS DS(on iss C oss Table 7. Mode of operation: CW 225 MHz; RF performance at V unless otherwise specified class-AB production test circuit. Symbol Parameter BLF573S_2 Product data sheet DC characteristics ...
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... NXP Semiconductors Fig 1. 6.1 Ruggedness in class-AB operation The BLF573S is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 900 mA Application information 7.1 Impedance information Table 8. Measured Z f MHz 225 Fig 2. BLF573S_2 Product data sheet 800 C oss (pF) ...
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... NXP Semiconductors 7.2 Reliability Years (1) T (2) T (3) T (4) T (5) T (6) T (7) T (8) T (9) T (10) T (11) T Fig 3. BLF573S_2 Product data sheet TTF (0.1 % failure fraction). = 100 110 120 130 140 150 160 170 180 190 200 C j BLF573S electromigration (I , total device) D Rev. 02 — ...
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... NXP Semiconductors 8. Test information 8.1 RF Performance The following figures are measured in a class-AB production test circuit. 8.1.1 1-Tone (dB 100 200 900 mA 225 MHz Fig 4. Power gain and drain efficiency as functions of load power; typical values BLF573S_2 Product data sheet 001aaj612 (%) (dB 300 400 ...
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... NXP Semiconductors 900 mA 225 MHz ( 55.2 dBm (330 W) L(1dB) ( 55.8 dBm (380 W) L(3dB) Fig 6. Load power as function of input power; typical values BLF573S_2 Product data sheet (dBm) Ideal ( Rev. 02 — 17 February 2009 BLF573S HF / VHF power LDMOS transistor 001aaj614 ( (dBm) i © NXP B.V. 2009. All rights reserved. ...
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... NXP Semiconductors 8.1.2 2-Tone (dB 100 200 300 900 mA 225.05 MHz. 2 Fig 7. Power gain and drain efficiency as functions of peak envelope load power; typical values 8.2 Test circuit Table 9. List of components For production test circuit, see Figure 9 Printed-Circuit Board (PCB): Rogers 5880; thickness copper plating = 35 m. ...
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... NXP Semiconductors Table 9. List of components …continued For production test circuit, see Figure 9 Printed-Circuit Board (PCB): Rogers 5880; thickness copper plating = 35 m. Component Description C15 multilayer ceramic chip capacitor C16 multilayer ceramic chip capacitor C17 multilayer ceramic chip capacitor C19 electrolytic capacitor ...
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... NXP Semiconductors C1 C2 Fig 10. Component layout for class-AB production test circuit BLF573S_2 Product data sheet B1 C9 C20 C10 Rev. 02 — 17 February 2009 BLF573S HF / VHF power LDMOS transistor C19 C13 C14 L2 C17 C11 C12 C16 C15 001aaj149 © NXP B.V. 2009. All rights reserved. ...
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... NXP Semiconductors 9. Package outline Earless flanged LDMOST ceramic package; 2 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 4.72 12.83 20.02 0.15 mm 3.43 12.57 19.61 0.08 0.186 0.505 0.006 0.788 inches 0.135 0.495 0.003 0.772 OUTLINE VERSION IEC SOT502B Fig 11 ...
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... NXP Semiconductors 10. Abbreviations Table 10. Acronym CW EDGE GSM HF LDMOS LDMOST RF SMD TTF VHF VSWR 11. Revision history Table 11. Revision history Document ID BLF573S_2 Modifications: BLF573S_1 BLF573S_2 Product data sheet Abbreviations Description Continuous Wave Enhanced Data rates for GSM Evolution Global System for Mobile communications ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 14. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.1 Ruggedness in class-AB operation Application information 7.1 Impedance information . . . . . . . . . . . . . . . . . . . 4 7.2 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 8.1 RF Performance . . . . . . . . . . . . . . . . . . . . . . . . 6 8 ...