BLF573S,112 NXP Semiconductors, BLF573S,112 Datasheet - Page 11

TRANSISTOR RF LDMOS SOT502B

BLF573S,112

Manufacturer Part Number
BLF573S,112
Description
TRANSISTOR RF LDMOS SOT502B
Manufacturer
NXP Semiconductors
Datasheets

Specifications of BLF573S,112

Transistor Type
LDMOS
Frequency
225MHz
Gain
27.2dB
Voltage - Rated
110V
Current Rating
42A
Current - Test
900mA
Voltage - Test
50V
Power - Output
300W
Package / Case
SOT502B
Application
HF/VHF
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
42A
Drain Source Voltage (max)
110V
Output Power (max)
300W
Power Gain (typ)@vds
27.2@50VdB
Frequency (max)
225MHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
20S
Drain Source Resistance (max)
90(Typ)@6Vmohm
Input Capacitance (typ)@vds
300@50VpF
Output Capacitance (typ)@vds
103@50VpF
Reverse Capacitance (typ)
2.3@50VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
70%
Mounting
Surface Mount
Mode Of Operation
CW
Number Of Elements
1
Vswr (max)
13
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
934062175112
NXP Semiconductors
9. Package outline
Fig 11. Package outline SOT502B
BLF573S_2
Product data sheet
Earless flanged LDMOST ceramic package; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
VERSION
OUTLINE
SOT502B
0.186
0.135
4.72
3.43
A
12.83
12.57
0.505
0.495
b
H
0.006
0.003
0.15
0.08
c
U 2
L
A
IEC
20.02
19.61
0.788
0.772
D
19.96
19.66
0.786
0.774
D 1
0.374
0.366
9.50
9.30
JEDEC
E
U 1
D 1
D
b
0.375
0.364
9.53
9.25
REFERENCES
E 1
Rev. 02 — 17 February 2009
3
1
2
0.045
0.035
1.14
0.89
0
F
19.94
18.92
0.785
0.745
JEITA
scale
H
w 2
5
D
M
0.210
0.170
F
5.33
4.32
D
10 mm
L
M
0.067
0.057
1.70
1.45
Q
20.70
20.45
0.815
0.805
U 1
HF / VHF power LDMOS transistor
0.390
0.380
9.91
9.65
U 2
E 1
PROJECTION
0.010
EUROPEAN
0.25
w 2
c
Q
E
BLF573S
© NXP B.V. 2009. All rights reserved.
ISSUE DATE
03-01-10
07-05-09
SOT502B
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