BLF573S,112 NXP Semiconductors, BLF573S,112 Datasheet - Page 2

• Manufacturer Part Number: BLF573S,112
• Description: TRANSISTOR RF LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF573S,112

• Transistor Type: LDMOS
• Frequency: 225MHz
• Gain: 27.2dB
• Voltage - Rated: 110V
• Current Rating: 42A
• Current - Test: 900mA
• Voltage - Test: 50V
• Power - Output: 300W
• Package / Case: SOT502B
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 42A
• Drain Source Voltage (max): 110V
• Output Power (max): 300W
• Power Gain (typ)@vds: 27.2@50VdB
• Frequency (max): 225MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 20S
• Drain Source Resistance (max): 90(Typ)@6Vmohm
• Input Capacitance (typ)@vds: 300@50VpF
• Output Capacitance (typ)@vds: 103@50VpF
• Reverse Capacitance (typ): 2.3@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 70%
• Mounting: Surface Mount
• Mode Of Operation: CW
• Number Of Elements: 1
• Vswr (max): 13
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934062175112

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF573S_2
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
[1]
Pin
1
2
3
Type number
BLF573S
Symbol
V
V
I
T
T
Symbol
R
D
stg
j
DS
GS
th(j-c)
Connected to flange.
R
th(j-c)
is measured under RF conditions.
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Parameter
thermal resistance from
junction to case
Description
drain
gate
source
Package
Name
-
Rev. 02 — 17 February 2009
Description
earless flanged LDMOST ceramic package, 2 leads
Conditions
Conditions
T
case
= 80 C; P
[1]
Simplified outline
L
HF / VHF power LDMOS transistor
= 300 W
1
2
3
[1]
Graphic symbol
Min
-
-
-
BLF573S
Typ
0.21
© NXP B.V. 2009. All rights reserved.
0.5
65
2
Max
110
+11
42
+150
225
sym112
Version
SOT502B
1
3
Unit
K/W
2 of 14
Unit
V
V
A
C
C