BLF573S,112 NXP Semiconductors, BLF573S,112 Datasheet - Page 6

• Manufacturer Part Number: BLF573S,112
• Description: TRANSISTOR RF LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF573S,112

• Transistor Type: LDMOS
• Frequency: 225MHz
• Gain: 27.2dB
• Voltage - Rated: 110V
• Current Rating: 42A
• Current - Test: 900mA
• Voltage - Test: 50V
• Power - Output: 300W
• Package / Case: SOT502B
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 42A
• Drain Source Voltage (max): 110V
• Output Power (max): 300W
• Power Gain (typ)@vds: 27.2@50VdB
• Frequency (max): 225MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 20S
• Drain Source Resistance (max): 90(Typ)@6Vmohm
• Input Capacitance (typ)@vds: 300@50VpF
• Output Capacitance (typ)@vds: 103@50VpF
• Reverse Capacitance (typ): 2.3@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 70%
• Mounting: Surface Mount
• Mode Of Operation: CW
• Number Of Elements: 1
• Vswr (max): 13
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934062175112

NXP Semiconductors
8. Test information
BLF573S_2
Product data sheet
Fig 4.
(dB)
G
p
30
28
26
24
22
0
V
Power gain and drain efficiency as functions of
load power; typical values
DS
= 50 V; I
8.1.1 1-Tone CW
G
D
8.1 RF Performance
p
100
Dq
= 900 mA; f = 225 MHz.
The following figures are measured in a class-AB production test circuit.
200
300
P
001aaj612
L
(W)
Rev. 02 — 17 February 2009
400
80
60
40
20
0
(%)
D
Fig 5.
(dB)
G
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
p
30
28
26
24
22
0
V
Power gain as function of load power; typical
values
Dq
Dq
Dq
Dq
Dq
Dq
Dq
DS
= 500 mA
= 700 mA
= 900 mA
= 1100 mA
= 1300 mA
= 1500 mA
= 1700 mA
= 50 V; f = 225 MHz.
100
HF / VHF power LDMOS transistor
(7)
(6)
(5)
(1)
(2)
(3)
(4)
200
300
BLF573S
© NXP B.V. 2009. All rights reserved.
P
001aaj613
L
(W)
400
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