BLF4G10-160,112 NXP Semiconductors, BLF4G10-160,112 Datasheet - Page 4

• Manufacturer Part Number: BLF4G10-160,112
• Description: TRANSISTOR RF LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF4G10-160,112

• Package / Case: SOT502A
• Transistor Type: LDMOS
• Frequency: 894MHz
• Gain: 19.7dB
• Voltage - Rated: 65V
• Current Rating: 15A
• Current - Test: 900mA
• Voltage - Test: 28V
• Power - Output: 160W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 15 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058737112; BLF4G10-160; BLF4G10-160

NXP Semiconductors
BLF4G10-160_1
Product data sheet
Fig 1. One-tone CW power gain and drain efficiency
Fig 3. Intermodulation distortion a function of
(dBc)
(dB)
IMD
G
p
21
19
17
15
20
40
60
80
0
V
f = 894 MHz.
as functions of load power; typical values
V
f = 894 MHz.
average load power; typical values
0
0
DS
DS
= 28 V; I
= 28 V; I
G
D
Dq
Dq
p
80
= 900 mA; T
40
= 900 mA; T
case
case
160
80
= 25 C;
= 25 C;
P
L(AV)
P
L
001aag546
001aag548
(W)
IMD3
IMD5
IMD7
(W)
240
120
Rev. 01 — 22 June 2007
60
40
20
0
(%)
D
Fig 2. Two-tone power gain and drain efficiency as
Fig 4. IMD3 as a function of average load power;
IMD3
(dBc)
(dB)
(1) I
(2) I
(3) I
(4) I
G
p
22
20
18
16
20
40
60
80
0
V
f = 894 MHz.
functions of average load power; typical values
V
typical values
Dq
Dq
Dq
Dq
0
0
DS
DS
= 800 mA.
= 900 mA.
= 1000 mA.
= 1100 mA.
= 28 V; I
= 28 V; T
1
2
3
4
G
Dq
D
case
p
40
40
= 900 mA; T
= 25 C; f = 894 MHz.
UHF power LDMOS transistor
BLF4G10-160
case
80
80
= 25 C;
P
P
L(AV)
L(AV)
© NXP B.V. 2007. All rights reserved.
001aag547
001aag549
(W)
(W)
120
120
60
40
20
0
(%)
D
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