BLF4G10-160,112 NXP Semiconductors, BLF4G10-160,112 Datasheet - Page 7

• Manufacturer Part Number: BLF4G10-160,112
• Description: TRANSISTOR RF LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF4G10-160,112

• Package / Case: SOT502A
• Transistor Type: LDMOS
• Frequency: 894MHz
• Gain: 19.7dB
• Voltage - Rated: 65V
• Current Rating: 15A
• Current - Test: 900mA
• Voltage - Test: 28V
• Power - Output: 160W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 15 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058737112; BLF4G10-160; BLF4G10-160

NXP Semiconductors
8. Test information
BLF4G10-160_1
Product data sheet
Fig 12. Circuit schematic for 894 MHz production test circuit
Fig 13. Component layout for 894 MHz production test circuit
L1
See
The striplines are on a double copper-clad Rogers 6006 Printed-Circuit Board (PCB) with
thickness = 0.635 mm.
See
C1
RF in
Table 8
Table 8
L1
for a list of components
for a list of components.
L2
C1
C2
L2
+V
V
bias
bias
C5
C5
C2
R1
R1
L3
L3
C6
C6
BLF4G10-160
Input-Rev1
L4
L4
L5
Rev. 01 — 22 June 2007
L5
BLF4G10-160
Output-Rev1
L6
L6
L7
L7
C7
C8
L8
C7
L8
UHF power LDMOS transistor
C8 C9
C9
r
= 6.15 and
V
BLF4G10-160
DD
L9
C3
C10
C4
V
DD
C3
© NXP B.V. 2007. All rights reserved.
L10
001aag557
L9
RF out
C10
001aag558
C4
L10
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