BFS505,115 NXP Semiconductors, BFS505,115 Datasheet - Page 2

• Manufacturer Part Number: BFS505,115
• Description: TRANS NPN 15V 9GHZ SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFS505,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 6V
• Current - Collector (ic) (max): 18mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.018 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1991-2; 934021370115; BFS505 T/R

NXP Semiconductors
FEATURES
 Low current consumption
 High power gain
 Low noise figure
 High transition frequency
 Gold metallization ensures
 SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is intended for low power amplifiers,
oscillators and mixers particularly in
RF portable communication
equipment (cellular phones, cordless
phones, pagers) up to 2 GHz.
QUICK REFERENCE DATA
Note
1. T
September 1995
V
V
I
P
h
f
G
F
SYMBOL
C
T
FE
excellent reliability
CBO
CES
tot
NPN 9 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
noise figure
PARAMETER
PINNING
PIN
1
2
3
open emitter
R
up to T
I
I
T
I
T
I
f = 900 MHz; T
base
emitter
collector
C
C
c
c
amb
amb
BE
= 5 mA; V
= 1.25 mA; V
= 5 mA; V
= 5 mA; V
= 0
Code: N0
= 25 C
= 25 C
DESCRIPTION
s
= 147 C; note 1
2
CONDITIONS
CE
CE
CE
amb
= 6 V; f = 900 MHz;
CE
= 6 V; T
= 6 V; f = 1 GHz;
= 6 V;
= 25 C
j
= 25 C
handbook, 2 columns




60



MIN.
Top view
Fig.1 SOT323.




120
9
17
1.2
Product specification
TYP.
1
3
BFS505
20
15
18
150
250


1.7
MBC870
MAX.
2
V
V
mA
mW
GHz
dB
dB
UNIT